 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD - 9.1092A IRLI2203G HEXFET(R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive RDS(on) Specified at VGS=5.0V & 10V Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. VDSS = 30V RDS(on) = 0.010 ID = 52A Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Collector Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 52 37 210 48 0.32 20 90 31 4.8 4.5 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Min. ---- ---- Typ. ---- ---- Max. 3.1 65 Units C/W Revision 1 IRLI2203G Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Min. 30 --- --- --- 1.0 44 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.039 --- --- --- --- --- --- --- --- --- --- --- --- 9.1 110 110 100 4.5 7.5 --- 3700 --- 1700 --- 310 --- 12 Max. Units Conditions --- V VGS = 0V, ID = 250A, TJ >-40C --- V/C Reference to 25C, ID = 1mA 0.010 VGS = 10V, ID = 31A 0.015 VGS = 5.0V, ID = 26A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 55A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 100 VGS = 10V nA -100 VGS = -10V 85 ID= 46A, VDS= 24V, VGS= 5.0V 150 ID= 55A nC 23 VDS = 24V 36 VGS = 10V, See Fig. 6 and 13 --- VDD = 15V --- ID = 55A ns --- RG = 5.0 --- RD = 0.26, See Fig. 10 Between lead, --- 6mm (0.25in.) nH from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- pF = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- 52 A 210 V ns C --- --- 1.6 --- 59 89 --- 0.11 0.17 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 31A, VGS = 0V TJ = 25C, IF = 55A di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 20H RG = 25, IAS = 55A. (See Figure 12) ISD 55A, di/dt 100A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. t=60s, =60Hz Caculated continuous current based on maximum allowable junction temperature; for recomended current-handling of the package refer to Design Tip # 93-4 IRLI2203G 10000 VGS 10.00V 5.00V 4.00V 3.50V 3.00V 2.75V 2.50V BOTTOM 2.25V TOP 1000 I , Drain-to-Source Current (A) D 1000 I , Drain-to-Source Current (A) D 100 VGS 10.00V 5.00V 4.00V 3.50V 3.00V 2.75V 2.50V BOTTOM 2.25V TOP 100 10 10 2.25V 1 1 2.25V 0.1 0.1 1 20s PULSE WIDTH Tc = 25C A 10 1 00 0.1 0.1 1 20s PULSE WIDTH TC = 175C 10 100 A VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, T C = 25oC Fig 2. Typical Output Characteristics, TC = 175oC R DS(on) , Drain-to-Source On Resistance (Normalized) 1000 2.5 ID = 52A I D , Drain-to-Source Current (A) 2.0 TJ = 25C 100 TJ = 175C 1.5 1.0 10 0.5 1 2 3 4 5 6 VDS = 15V 20s PULSE WIDTH 7 8 9 10 A 0.0 -60 -40 -20 VGS = 5.0V 0 20 40 60 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLI2203G 7000 6000 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz Ciss = Cgs + C gd , Cds SHORTED Crss = C gd Coss = Cds + C gd 16 VDS = 24V I D = 55A C, Capacitance (pF) 12 5000 Ciss 4000 Coss 3000 8 2000 4 1000 Crss A 1 10 100 0 0 20 40 60 0 FOR TEST CIRCUIT SEE FIGURE 13 80 100 A 120 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) ID , Drain Current (A) 100s 100 100 TJ = 175C 1ms TJ = 25C VGS = 0V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 10 A 2.4 10 0.1 T = 25C C T = 175C J Single Pulse 1 10 10ms A 100 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRLI2203G VDS 60 RD VGS D.U.T. VDD LIMITED BY PACKAGE 50 RG ID, Drain Current (Amps) 10 V 40 Pulse Width 1 s Duty Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 10 0 25 50 75 100 125 150 A 175 TC , Case Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 N o te s : 1 . D u ty fa c to r D = t /t PD M t 1 t 2 1 2 2 . P e a k TJ = P D M x Z th J C + T C A 100 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRLI2203G EAS , Single Pulse Avalanche Energy (mJ) 240 TOP 200 ID 21A 37A BOTTOM 52A 10 V 160 Fig 12a. Unclamped Inductive Test Circuit 120 80 40 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRLI2203G Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD * * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRLI2203G Package Outline TO-220 FullPak Outline Dimensions are shown in millimeters (inches) Part Marking Information TO-220 FullPak WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. 6/95 |
Price & Availability of IRLI2203G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |